Substrate processing method and substrate processing apparatus

ABSTRACT

A developing process of the photo-resist coated on the wafer is performed, cleaning the developing solution by a cleaning solution then transferring the wafer to the electron beam radiation unit before the rinsing solution and the resist dries out. The radiation chamber is replaced with a helium gas to form a predetermined degree of vacuum or atmospheric pressure. An electron beam is radiated and the front face of the wafer is heated for a predetermined period of time. In this method, deformation and breaking of a pattern caused by drying after the development can be prevented.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a substrate processing methodand a substrate processing apparatus for reforming a coating film byradiating a semi-conductor wafer with a beam.

[0003] 2. Description of the Related Art

[0004] In a photolithography step of a semiconductor device manufacture,photo-resist is applied on the surface of a semi-conductor wafer (aresist application step) after printing mask patterns on the resistsurface (an exposure step), a photo sensitive portion of the resist or aphoto insensitive portion thereof is dissolved in developing solutionselectively and the developing solution is washed away by rinsingsolution (a development step) to form the resist patterns on the frontface of a wafer. Line width of the resist patterns of the late yearstends to be remarkably minute as technology advances.

[0005] However, because the line width of the resist patterns are toominute, especially when aspect ratio is high, hardness of the resistsuitable for the aspect ratio is not obtained in the process of printingpatterns, resulting in deformation of patterns or breaking thereof.

[0006] In particular, in a development step, substrate is spun with highspeed in order to wash away the developing solution between the patternswith rinsing solution, and dried by scattering the rinsing solution,pattern breaking caused by the centrifugal force of the rotationoccurred.

SUMMARY OF THE INVENTION

[0007] An object of the present invention is to provide a substrateprocessing method and a substrate processing apparatus that is capableof preventing patterns from being deformed or broken.

[0008] Another object of the present invention is to provide, inparticular, substrate processing method and a substrate processingapparatus that is capable of hardening resist after developing process,and improving adhesion thereof to a wafer.

[0009] In order to accomplish the above-described objects, a firstaspect of the present invention is a substrate processing method,comprising the steps of (a) forming at least a predetermined pattern onthe substrate, (b) performing a treatment using an aqueous solution onthe substrate after the step (a) and (c) radiating a beam with awavelength shorter than that of a visible ray on the substrate.

[0010] A second aspect of the substrate processing method, comprisingthe steps of (a) developing a photo sensitive material on the substratewith a developing solution, (b) cleaning the developing solution with acleaning solution and (c) radiating a beam with a wavelength shorterthan that of a visible ray on the photo sensitive material before thephoto sensitive material and the cleaning solution are dried out.

[0011] A third aspect of the substrate processing method, comprising thesteps of applying a photo sensitive material on the substrate, radiatinga beam with a wavelength shorter than that of a visible ray on the photosensitive material, developing a photo sensitive material with adeveloping solution and cleaning the developing solution with a cleaningsolution.

[0012] A fourth aspect of the substrate processing method, comprisingthe steps of heating the substrate at a first temperature, radiating abeam with a wavelength shorter than that of a wavelength of a visibleray on the photo sensitive material after the heating and heating theradiated substrate at a second temperature higher than the firsttemperature.

[0013] A fifth aspect of the substrate processing method, comprising thesteps of (a) forming at least a predetermined pattern on the substrate,(b) performing a treatment using an aqueous solution on the substrateafter the step (a), and (c) splashing the aqueous solution between thepatterns after the step (b) with a predetermined electromagnetic energy.

[0014] A sixth aspect of the substrate processing apparatus comprising,a development and cleaning portion for developing and cleaning thedeveloping solution with a cleaning solution and a radiating portion forradiating a beam with a wavelength shorter than that of a visible ray onthe photo sensitive material before the photo sensitive material and thecleaning solution are dried out.

[0015] In the present invention, because photo sensitive material ishardened and reformed by, for example, electron beam in the state thatthe substrate is not completely dried after the developing process,deformation and breaking of a pattern caused by drying after thedevelopment and by the surface tension of cleaning solution isprevented, and adhesion of photo sensitive material to the substrate canbe improved.

[0016] In the present invention, because photo sensitive material ishardened and reformed by, for example, electron beam after coating photosensitive material, patterns are prevented from being deformed or brokenand adhesion of photo sensitive material to the substrate can beimproved in the later step.

[0017] These objects and still other objects and advantages of thepresent invention will become apparent upon reading the followingspecification when taken in conjunction with the accompanying drawings

BRIEF DESCRIPTION OF THE DRAWINGS

[0018]FIG. 1 is a plan view showing the whole construction of asubstrate processing apparatus for a semiconductor wafer to which thepresent invention is applied.

[0019]FIG. 2 is a front view showing the whole construction of the samesubstrate processing apparatus.

[0020]FIG. 3 is a rear view showing the whole construction of the samesubstrate processing apparatus.

[0021]FIG. 4 is a schematic cross-sectional view of a developeraccording to the present invention.

[0022]FIG. 5 is a schematic plan view of the same developer.

[0023]FIG. 6 is a schematic cross-sectional view of a resist coatingapparatus according to the present invention.

[0024]FIG. 7 is a schematic cross-sectional view of an electron beamradiation unit according to the present invention.

[0025]FIG. 8 is a flow chart showing a series of operation in thesubstrate processing apparatus of the present invention.

[0026]FIG. 9A is a magnified cross-sectional view showing the state thata rinsing solution remains between the patterns.

[0027]FIG. 9B is a magnified cross-sectional view showing the case wherethe depth of radiation is small.

[0028]FIG. 9C is a magnified cross-sectional view showing the case wherethe depth of radiation is large.

[0029]FIG. 10 is a magnified cross-sectional view showing spaces betweenthe resist patterns according to another embodiment of the presentinvention.

[0030]FIG. 11 is a flow chart showing a series of operation according toanother embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

[0031] Hereinafter, embodiments of the present invention will bedescribed with reference to the drawings.

[0032]FIGS. 1, 2 and 3 are the views showing a total configuration of asubstrate processing apparatus in an embodiment of the presentinvention. FIG. 1 is a plan view, FIG. 2 is a front view and FIG. 3 is arear view.

[0033] A coating and developing system 1 is comprised of a cassettestation 10 for carrying a plurality of, for example, 25 semiconductorwafers per a wafer cassette CR as a unit, into or out of the system fromor to an outside, and carrying the wafer W in and out of the wafercassette CR, a processing station 12 constituted by stacking variouskinds of processing stations each for performing predeterminedprocessing for the wafers W one by one in the resist coating process atpredetermined locations in multiple tiers, an aligner provided adjacentto the processing station 12 (not shown) and a interface section 14 fortransferring wafer W are integrally connected.

[0034] In the cassette station 10, as shown in FIG. 1, a plurality of,for example, up to four cassettes CR are placed in a line in anX-direction with respective outlet and inlet ports for the wafer Wfacing the processing station 11 side at positions of projections 20 aprovided for alignment thereof on a cassette mounting table 20. A wafertransfer mechanism 22 movable in the direction of arrangement of thecassettes (an X-direction) and in the direction of arrangement of thewafers housed in the wafer cassette CR (a vertical direction) isstructured to be selectively accessible to each of the wafer cassettesCR. Further, the wafer transfer mechanism 22 is structured to berotatable in a θ-direction so as to be accessible to an alignment unit(ALIM) and extension unit (EXT) included in a multistage station sectionof a third unit group G3 at the processing station 12 side as will bedescribed later.

[0035] In the processing station 12, as shown in FIG. 1, a verticalcarrier type of a main wafer transfer mechanism 24 is provided at thecenter, around which a pair of or a plurality of pairs of all processingstations are multi-tiered. In this example, five groups G1, G2, G3, G4and G5 are disposed multi-tired. The multi-tired units of the first andthe second groups G1 and G2 are disposed on the front side of the systemadjacent with each other, (the front in FIG. 1). The multi-tired unitsof the third group G3 is disposed adjacent to the cassette station 10.The multi-tired unit of the fourth group G4 is disposed adjacent to theinterface section 12, and the multi-tired unit of the fifth group G5 isdisposed on the rear side. In addition, the fifth group G5 is configuredas such that it is movable along with a rail 25, for the purpose ofmaintaining the main wafer transfer mechanism 24.

[0036] The main wafer transfer mechanism 24 has a transfer mechanism 24a as shown in FIG. 3, which is configured to be rotatable in theθ-direction. The wafer transfer mechanism 24 a is movable and accessiblein the directions of X, Y and Z in order to transfer the wafer W to eachsurrounding processing unit.

[0037] In the first group G1, as shown in FIG. 2, two spinner-typeprocessing units for performing predetermined processing while the waferW is mounted on a spin chuck within a cup CP, for example, a resistcoating unit (COT) and a developing processing unit (DEV) are two-tieredfrom the bottom in order. In the second group G2, two spinner-typeprocessing units, for example, a resist coating unit (COT) and adeveloping processing unit (DEV) are two-tiered from the bottom inorder. It is preferable for the resist coating units (COT) to bedisposed in the lower tire because drainage of resist solution istroublesome from a point of view of both maintenance and its structure.However, it is possible to dispose the resist coating unit in the uppertire when necessary.

[0038] As shown in FIG. 3 in the third group G3, an oven type processingunit, for example, a cooling unit (COL), an adhesion unit (AD), anelectron beam radiation unit (EB) 30 of the present invention, analignment unit (ALIM), an extension unit (EXT), three pre-baking units(PEBAKE) and a post-baking units (POBAKE) are multi-tiered from thebottom in order. In the fourth group G4, an oven type processing unit,for example, two cooling units (COL), an extension and cooling unit(EXTCOL), an extension unit (EXT), an electron beam radiation unit (EB)30 of the present invention, two post-exposure baking units (PEBAKE) andtwo post-baking units (POBAKE) are multi-tiered from the bottom inorder.

[0039] The heat influence between each unit can be reduced by disposingthe cooling unit (COL) and the extension cooling unit (EXTCOL) whichperforms processes at low temperature, in lower tire, and disposing thebaking unit (PREBAKE), the post-baking unit (POBAKE) and the adhesionunit (AD) which performs processes at high temperature in upper tier asdescribed herein. However, the units may be disposed in multi-tire atrandom.

[0040] The interface portion 14 is configured so as to be the same sizeas the processing station 12 in the depth direction, but smaller in thewidth direction. A transportable pickup cassette CR and a fixed-typebuffer cassette BR are two-tiered at the front of the interface section14, whereas, an edge exposure unit 28 is disposed at the rear, and awafer transfer mechanism 26 is further provided at the center. The wafertransfer mechanism 26 is configured to move in the X-direction and thevertical direction to get access to both the cassettes CR, BR and theedge exposure unit 28. In addition, the wafer transfer mechanism 26 canbe rotated in the θ-direction and also can be accessed to the extensionunit (EXT) in the multi-tiered units of the fourth unit group G4 on theprocessing station 12 side and also to a wafer delivery table (notshown) on the adjacent aligner side.

[0041]FIGS. 4 and 5 show schematic cross-sectional view of a developer35 in the development unit (DEV). A circular cup CP is provided on thedeveloper 35 and a spin chuck 60 is disposed therein. The spin chuck 60is comprised so as to rotate by the driving force of a driving motor 62in the state that the wafer W is fixed by means of vacuum suctionfunction. A mechanism for having the driving motor 62 move up and downthe spin chuck 60 is also provided. A developing solution dischargingnozzle 61 is disposed to supply a developing solution on the surface ofthe wafer W. The developing solution discharging nozzle 61 is attachedto an arm that can be moved by a transfer mechanism (not shown) in the Ydirection. The developing solution discharging nozzle 61 can be moved asthe arm moves to a nozzle waiting position 78 where the nozzle standsby. In addition, a hole for discharging the developing solution isprovided in the developing solution discharging nozzle 61 (not shown).The number of the hole may be one or may be plural. A rinsing solutiondischarging nozzle 63 supplying a rinsing solution as a cleaningsolution in order to wash away the developing solution stands by in theleft hand side of the cup CP in FIG. 5. The rinsing solution dischargingnozzle 63 can be moved by the same transfer mechanism in the Y directionabove the wafer W. In the cup CP, a drain opening 64 for waste fluid isprovided, through which the developing solution and the rinsing solutionused in the process is discharged.

[0042] A schematic cross-sectional view of the resist coating apparatus55 in a resist coating unit of a spin coating system same as thedevelopment unit (DEV) and the coating unit (COT) is shown in FIG. 6.Regarding the resist coating apparatus 55, the spin chuck 60 and thedriving motor 62 and the transfer mechanism of the nozzle 51 todischarge photo-resist as photo sensitive material on the surface of thewafer W and the like are similar to that of the developer 35. Since theshape of cup CP and the nozzle 51 are merely different from thedeveloper 35 and the shape thereof is not relevant to the spirit of thepresent invention, the explanation regarding the resist coatingapparatus is omitted. In addition, a substance that is insoluble to theelectron beam radiation is used as a photo-resist.

[0043] Next, a configuration of the electron beam radiation unit (EB) 30will be described with reference to FIG. 7.

[0044] The opening portion 45 for delivering the wafer W by the transfermechanism 24 a (FIG. 3) is provided on both sides of the electron beamradiation unit (EB) 30. A radiation chamber R in the electron beamradiation unit(EB) 30 is hermetically sealed by closing a shutter 43provided in the both opening portions 45. The shutter can be closed oropened freely. In addition, a gas supply port 44 for taking inert gas,for example, helium gas, from outside the radiation chamber R to theinside thereof is provided on the top of the unit. An exhaust-port 42 isprovided on the bottom of the unit. A gas in the radiation chamber R isexhausted with a vacuum pump (not shown) from the exhaust port 42,creating a vacuum in the radiation chamber R.

[0045] In the radiation chamber R, a mounting table 47 for mounting thewafer W is disposed near the center on the bottom thereof. Three pins 46rise and lower when delivering the wafer W by the wafer transfer means24 a (FIG. 3) is incorporated therein. A radiating apparatus 41 forradiating electron beam on the wafer W is disposed on the mounting table47. The radiating apparatus 41 is structured to be movable in verticaldirection and having a plurality of electron beam lamps (not shown)generating electron beam in a housing 41 a that has roughly acylindrical shape.

[0046] An operation of a substrate processing apparatus comprised in theabove described manner is explained with reference to the flow chartshown in FIG. 8.

[0047] First, in the cassette station 10, the wafer transfer mechanism22 accesses the cassette CR housing wafers before processing on thecassette mounting table 20, takes out a semi-conductor wafer W from thecassette CR (S1), and transfers to the alignment unit (ALIM). After thealignment of the wafer W in the alignment unit (ALIM) (S2), the wafer Wis transferred to the adhesion unit (AD) by the main wafer transfermechanism 24 (S3), where hydrophobic process is performed. After apredetermined cool processing is performed (the first cooling) in thecooling unit (COL) (S4), the wafer is transferred to the resist coatingunit (COT).

[0048] In the resist coating unit (COT) in FIG. 6, the spin chuck 60rises when the wafer W is conveyed to the position right above the cupCP. After vacuum sucking the wafer W, the spin chuck lowers and thewafer W fits in a predetermined position in cup CP (a state shown inFIG. 6) and the nozzle 51 standing by at the nozzle waiting positionmoves to the center position above the wafer W. Then the regist issupplied and is applied uniformly by rotation of the wafer W (forexample, number of rotation is 100 rpm to 3000 rpm) (S5).

[0049] Next, a predetermined heat processing (the first heating) isperformed in the pre-baking unit (PREBAKE) (S6), cool processing (thesecond cooling) is performed in the cooling unit (COL) (S7). Then thewafer is transferred by the wafer transferring mechanism 26 to thealigner (not shown) where exposure process is performed (S9), throughthe interface section 14. After the exposure process, a predeterminedheat processing (the second heating) (S10) is performed at thepost-exposure baking unit (PEBAKE) and the cool processing (the thirdcooling) (S11) is performed in the cooling unit (COL). After that thewafer W is transferred to the developing unit (DEV).

[0050] In the developing unit (DEV), the spin chuck 60 rises when thewafer W is conveyed to the position right above the cup CP. After vacuumsucking the wafer W, the spin chuck lowers and the wafer W fits in apredetermined position in cup CP (a state shown in FIG. 4) and thenozzle 61 standing by at the nozzle waiting position 78 moves to thecenter position above the wafer W. Then the developing solution issupplied and is applied uniformly by rotation of the wafer W (forexample, 100 rpm to 1000 rpm) (S12). And after predetermined period oftime passes, then the rinsing solution discharging nozzle 63 moves to aposition right above the wafer W and a rinsing solution, for example apure water, is discharged. The developing solution is washed away withcentrifugal force of the substrate rotation.

[0051] At that point, scattering the rinsing solution by rotating thewafer W at low speed, for example 30 rpm to 50 rpm, for a predeterminedperiod of time prevents the breaking of the patterns with thecentrifugal force. And, as shown in FIG. 9A, the rinsing solution 72remains between the patterns formed by the resist 70, and the resist 70itself is not dried out. (In other words, before the resist 70 and therinsing solution 72 completely dries out or hardens). When completelydried out at this point, the patterns becomes fragile and easy to break.Then the wafer W is transferred to the next step, to the electron beamradiation unit (EB) 30 in the state that is not completely dried out.With this method the resist pattern is transferred to the next stepwithout deformation, breaking and with moisture.

[0052] In the electron beam radiation unit (EB), one of the two shutter43 s opens and the wafer W is transferred to the radiation chamber R.The shutter 43 closes while the wafer W is transferred to the pin 46 andplaced on the mounting table 47 with lowering of the pin, and aradiation chamber R is hermetically sealed off. Then, the radiationchamber R is formed vacuum to a predetermined degree, and replaced withhelium gas so that the pressure inside the chamber is the same, forexample, as the atmospheric pressure. And the electron beam is radiatedand heats the front face of the wafer W for a predetermined period oftime with an accelerating voltage of 30 kv-200 kv by the radiatingapparatus 41. In the process, the resist hardens and reforms (S13). Inaddition, nitrogen gas may be used instead of helium gas, and S13 may beperformed in an atmospheric gas with low oxygen concentration incomparison with the oxygen concentration of the air. The process mayalso be performed under a reduced atmospheric pressure.

[0053] Incidentally, electron beam can change a depth that electronreaches into the resist depending on a magnitude of the acceleratingvoltage. Both FIGS. 9B, and 9C are the schematic diagrams of a magnifiedimage of the “part A” in FIG. 9A. (outlined with a broken line). Whenhardening the surface of the resist, namely 70 a as shown in FIG. 9B(the depth that electron reaches is small), the radiation is performedwith low voltage. On the other hand, when hardening the bottom of theresist, namely 70 b as shown in FIG. 9C (the depth that electron reachesis large), the radiation is performed with high voltage. Therefore thepart to be hardened is selected appropriately. Further, apart from thehardening of the resist in this manner, the surface may be reformedwhile having a rinsing solution 72 evaporate as shown in FIG. 9A withthe electron beam. In addition, the rinsing solution 72 may be splashedwith using the electron beam (electromagnetic energy).

[0054] After radiation of the electron beam is finished, and the resistachieves a predetermined degree of hardness, the radiation chamber R isdepressurized to have the wafer W dried out. At this state, there is nopossibility that the resist is being deformed or broken due to thesurface tension as the rinsing solution between the patterns dries out,since the resist has already achieved a degree of hardness according tothe aspect ratio. As described in this method, hardening the resistwithout having it completely dried out prevents deformation and breakingcaused by drying after the development.

[0055] In addition, since the radiation chamber R is filled with heliumwhich has higher heat conductivity than inert gas such as nitrogen,evaporation of the rinsing solution between the patterns by electronbeam radiation is encouraged and the wafer W can instantly be dried out.With this method, the task is shortened compared with the case whennitrogen gas is used. Further, employment of inert gas of these kinds isto prevent absorption of light by oxygen by making absence of oxygen.Therefore, radiation may be performed in a vacuum state namely inabsence of oxygen without employing these inert gas.

[0056] When the electron beam radiation processing is over, apredetermined heat processing (the third heating) is performed in thepost-baking unit (POBAKE) (S14). The heat processing is performed, forexample, at the temperature of more than 100 degrees Celsius. And afterthe cool processing (the fourth cooling) is performed in the coolingunit (COL) (S15), the wafer W is returned to the cassette station 10(S16).

[0057] Next, process performed after the development in anotherembodiment of the present invention is described with reference to FIG.10. According to the first embodiment, in the development process afterthe cleaning with the rinsing solution, when a gap L and a gap M aredifferent in size as illustrated, the surface tension of the rinsingsolution 72 a is larger in the gap L (the wider gap), compared to thesurface tension in the gap M (the narrower gap). In this case, a nozzle(not shown) different from the developing solution discharging nozzle 61and the rinsing solution nozzle 63 as shown in FIG. 5 is provided and asurface-active agent is supplied on the rinsing solution by the nozzleso that the surface tension thereof is reduced. With this method,deformation or breaking of the patterns is prevented, and furthermore,the prevention of the deformation or the breaking is confirmed byradiating the electron beam as in the first embodiment. In addition, theadjustment of such surface tension may be performed by means other thansupplying the surface-active agent, for example, by treating thesurface, and the like. The prevention of deformation and breaking of thepatterns by tractive force between the patterns can also be expected byadjusting the surface tension.

[0058] The present invention is not limited to an embodiment asdescribed above.

[0059] In the aforesaid embodiment, the electron beam is radiated afterthe developing process and the resist is reformed. However, the resistmay be reformed, for example, ahead of the development after exposure,with the electron beam radiation. Alternatively, the radiation may beafter the resist coating process or before the etching process. Inaddition, radiation of the electron beam may be performed in the step 14of the third heating step as shown in FIG. 8 without performing theradiation in the step 13. In that case, wafer W is heat processed at afirst temperature (S111), as shown in FIG. 11 at first, then radiatedwith an electron beam (S112), after that, heat processed at a secondtemperature higher than the first temperature (S113). The reformingprocess can be performed more efficiently by heat processing the waferat the first temperature lower than the second thereof before theelectron beam radiation.

[0060] In addition, in the aforesaid embodiment, electron beam is usedfor hardening the resist, however, ultraviolet ray may be usedalternatively.

[0061] Moreover, in the aforesaid embodiment a radiation chamber isfilled with helium gas and the radiation process is performed.Alternatively, nitrogen gas may be used in the process.

[0062] In the description of the present embodiment, the wafer coatedwith the resist is taken as an example. However, the substrate is notlimited to a wafer, for example, the present invention can be applied toa substrate such as a glass substrate for a liquid crystal apparatus. Inaddition, the patterns formed on the substrate surface is not limited toresist patterns. The present invention can naturally be applied to asubstrate, for example, on which an insulation layer is formed (a SODfilm).

[0063] As described above, in the present invention, because the resistis hardened and reformed by the electron beam in the state that thesubstrate is not completely dried after the developing process,deformation and breaking of a pattern caused by drying after thedevelopment and the surface tension of cleaning solution is prevented,and adhesion of the resist to the wafer can be improved.

[0064] The disclosure of Japanese Patent Application No.2000-246223filed Aug. 15, 2000 including specification, drawings and claims areherein incorporated by reference in its entirety.

[0065] Although only some exemplary embodiments of this invention havebeen described in detail above, those skilled in the art will readilyappreciated that many modifications are possible in the exemplaryembodiments without materially departing from the novel teachings andadvantages of this invention. Accordingly, all such modifications areintended to be included within the scope of this invention.

1. A method for processing a substrate comprising the steps of: (a)forming at least a predetermined pattern on the substrate; (b)performing a treatment using an aqueous solution on the substrate afterthe step (a); and (c) radiating a beam with a wavelength shorter thanthat of a visible ray on the substrate.
 2. The method as set forth inclaim 1, wherein the step (b) is a cleaning step cleaning the substratewith a cleaning solution.
 3. The method as set forth in claim 1, whereinthe step (c) is performed after the step (b).
 4. The method as set forthin claim 3, wherein the step (c) is performed in a state that theaqueous solution remains between the patterns.
 5. The method as setforth in claim 3, wherein the step (c) is a radiation step radiating thesubstrate with a bean so that the beam removes the aqueous solutionremained in the pattern at a predetermined depth thereof.
 6. The methodas set forth in claim 3, further comprising the step of: adjusting asurface tension on the pattern before the step (c).
 7. The method as setforth in claim 6, wherein said adjusting step has a step to supply asurface-active agent on the pattern.
 8. The method as set forth in claim1, wherein the bean is an electron beam.
 9. The method as set forth inclaim 1, wherein the beam is an ultraviolet ray.
 10. A method forprocessing a substrate comprising the steps of: (a) developing a photosensitive material on the substrate with a developing solution; (b)cleaning the developing solution with a cleaning solution; and (c)radiating a beam with a wavelength shorter than that of a visible ray onthe photo sensitive material before the photo sensitive material and thecleaning solution are dried out.
 11. The method as set forth in claim10, wherein the step (a) and the step (b) are performed in a firstchamber, and the step (c) is performed in a second chamber, differentfrom the first chamber.
 12. The method as set forth in claim 11, whereinthe step (c) has a step of reducing a pressure in the second chamber.13. The method as set forth in claim 11, wherein the step (c) has a stepof replacing an air inside the second chamber with an inert gas.
 14. Themethod as set forth in claim 13, wherein the inert gas includes a heliumgas.
 15. The method as set forth in claim 10, wherein the beam is anelectron beam.
 16. The method as set forth in claim 10, wherein the beamis an ultraviolet ray.
 17. The method as set forth in claim 10, furthercomprising the step of: supplying a surface-active agent on thesubstrate after the cleaning solution is supplied.
 18. The method as setforth in claim 10, wherein the step (c) is a radiating step radiating abeam with a wavelength shorter than that of a visible ray on the photosensitive material before the photo sensitive material and the cleaningsolution are dried out.
 19. The method as set forth in claim 10,wherein, the step (c) is performed in a reduced atmospheric pressureand/or in a low oxygen concentration compared with a helium gas or anitrogen gas and /or oxygen concentration.
 20. A method for processing asubstrate comprising the steps of: applying a photo sensitive materialon the substrate; radiating a beam with a wavelength shorter than thatof a visible ray on the photosensitive material; developing a photosensitive material with a developing solution; and cleaning thedeveloping solution with a cleaning solution.
 21. The method as setforth in claim 20, wherein the radiating step sets a depth of theradiation on the photo sensitive material.
 22. A method for processing asubstrate comprising the steps of: heating the substrate at a firsttemperature; radiating a beam with a wavelength shorter than that of awavelength of a visible ray on the photo sensitive material after theheating; and heating the radiated substrate at a second temperaturehigher than the first temperature.
 23. A method for processing asubstrate comprising the steps of: (a) forming at least a predeterminedpattern on the substrate; (b) performing a treatment using an aqueoussolution on the substrate after the step (a); and (c) splashing theaqueous solution between the patterns after the step (b) with apredetermined electromagnetic energy. 24-27. cancelled.